GTO snubber capacitor in power electronic equipment

Short Description:

Snubber circuits are essential for diodes used in switching circuits. It can save a diode from overvoltage spikes, which may arise during the reverse recovery process.

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Technical data

Operating temperature range	Max.Operating temperature.,Top,max: + 85℃Upper category temperature: +85℃Lower category temperature: -40℃
capacitance range	0.22～3μF
Rated voltage	3000V.DC～10000V.DC
Cap.tol	±5%(J) ;±10%(K)
Withstand voltage	1.35Un DC/10S
Dissipation factor	tgδ≤0.001 f=1KHz
Insulation resistance	C≤0.33μF RS≥15000 MΩ (at 20℃ 100V.DC 60S) C＞0.33μF RS*C≥5000S (at 20℃ 100V.DC 60S)
Withstand strike current	see datasheet
Life expectancy	100000h(Un; Θhotspot≤70°C)
Reference standard	IEC 61071 ;

Feature

1. Mylar tape, Sealed with resin;

2. Copper nut leads;

3. Resistance to high voltage, low tgδ, low temperature rise;

4. low ESL and ESR;

5. High pulse Current.

Application

1. GTO Snubber.

2. Widely used in power electronic equipment when the peak voltage, peak current absorption protection.

Typical circuit

Outline drawing

Specification

Un=3000V.DC
Capacitance (μF)	φD (mm)	L(mm)	L1(mm)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms(A)
0.22	35	44	52	25	1100	242	30
0.33	43	44	52	25	1000	330	35
0.47	51	44	52	22	850	399	45
0.68	61	44	52	22	800	544	55
1	74	44	52	20	700	700	65
1.2	80	44	52	20	650	780	75
1.5	52	70	84	30	600	900	45
2.0	60	70	84	30	500	1000	55
3.0	73	70	84	30	400	1200	65
4.0	83	70	84	30	350	1400	70
Un=6000V.DC
Capacitance (μF)	φD (mm)	L(mm)	L1(mm)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms(A)
0.22	43	60	72	25	1500	330	35
0.33	52	60	72	25	1200	396	45
0.47	62	60	72	25	1000	470	50
0.68	74	60	72	22	900	612	60
1	90	60	72	22	800	900	75

Un=7000V.DC
Capacitance (μF)	φD (mm)	L(mm)	L1(mm)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms(A)
0.22	45	57	72	25	1100	242	30
0.68	36	80	92	28	1000	680	25
1.0	43	80	92	28	850	850	30
1.5	52	80	92	25	800	1200	35
1.8	57	80	92	25	700	1260	40
2.0	60	80	92	23	650	1300	45
3.0	73	80	92	22	500	1500	50

Un=8000V.DC
Capacitance(μF)	φD (mm)	L(mm)	L1(mm)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms(A)
0.33	35	90	102	30	1100	363	25
0.47	41	90	102	28	1000	470	30
0.68	49	90	102	28	850	578	35
1	60	90	102	25	800	800	40
1.5	72	90	102	25	700	1050	45
2.0	83	90	102	25	650	1300	50

Un=10000V.DC
Capacitance (μF)	φD (mm)	L(mm)	L1(mm)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms(A)
0.33	45	114	123	35	1500	495	30
0.47	54	114	123	35	1300	611	35
0.68	65	114	123	35	1200	816	40
1	78	114	123	30	1000	1000	55
1.5	95	114	123	30	800	1200	70